Sputter target magnet

ABSTRACT

A method for modifying magnetic field distribution in a deposition chamber is disclosed. The method includes the operations of providing a target magnetic field distribution, removing a first plurality of fixed magnets in the deposition chamber, replacing each of the first plurality of fixed magnets with respective ones of a second plurality of magnets, performing at least one of adjusting a position of at least one of the second plurality of the magnets, and adjusting a size of at least one of the second plurality of magnets, adjusting a magnetic flux of at least one of the second plurality of magnets, measuring the magnetic field distribution in the deposition chamber, and comparing the measured magnetic field distribution in the deposition chamber with the target magnetic field distribution.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application is a continuation of U.S. patent applicationSer. No. 15/940,609, filed on Mar. 29, 2018, which claims priority toU.S. Provisional Patent Application No. 62/552,947, filed on Aug. 31,2017, each of which is incorporated by reference herein in its entirety.

BACKGROUND

Emerging applications in micro-electro-mechanical systems (MEMS), CMOSimage sensors and packaging technologies, such as through-silicon vias(TSV) are driving Physical Vapor Deposition (PVD) development on filmslike Aluminum Nitride (AlN), Indium Tin Oxide (ITO), Aluminum Oxide(Al₂O₃) and Germanium (Ge).

There are existing metallization systems in the semiconductor industry.With deposition capabilities spanning front end metallization likecobalt and tungsten, aluminum and copper interconnect, as well aspacking applications like under bump metallization, a vast majority ofmicrochips made in the last 20 years have been created using one of theexisting systems across the globe. The existing systems' abilities todeposit a wide variety of ultra-pure films with tight control over filmthickness, superior bottom coverage and high conformality have enabledthe fabrication of leading edge devices.

With existing systems still in production, with many in their originalconfiguration, there are a number of product improvements availablewhich provide improved process performance and tool productivity. Forexample, throughput bottlenecks at the Cool Down chamber can beeliminated by conversion of Chamber A from Pass Thru to Cool Down. Waferplacement errors can be eliminated with easy local center finding (EZLCF), while improving the performance for clamped processes with tightedge exclusions and eliminating stack-up errors related to multi-chamberprocess sequences. In addition, chamber upgrades are available for manyof the chambers, including TxZ (a TiN heater for wafer heating process),to improve on-wafer uniformity and reduce maintenance.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 is a schematic illustration of a process chamber, in accordancewith some embodiments.

FIG. 2 illustrates various features of the process chamber andcorresponding magnets and magnetic fields, in accordance with someembodiments.

FIG. 3 is a schematic illustration the distribution of the processchamber magnets, in accordance with some embodiments.

FIG. 4 is a schematic illustration of the magnetic field as a functionof the radius of the target and the consumption of the target as afunction of the radius of the target, in accordance with someembodiments.

FIG. 5 is a schematic illustration of the magnetic field and targetprofile as functions of the radius of the target, in accordance withsome embodiments.

FIG. 6 is a schematic illustration of adjustable magnets in the modifiedconfiguration of the process chamber, in accordance with someembodiments.

FIG. 7 is a schematic illustration of an adjustable magnet, inaccordance with some embodiments.

FIG. 8 is a schematic illustration of the target profile and magnetfield as functions of the radius of the target in the process chamber,in accordance with some embodiments.

FIG. 9 is a schematic illustration of the relationship between thetarget profile and the magnetic field, in accordance with someembodiments.

FIG. 10 is flow chart illustrating a method for modifying magnetic fielddistribution in a deposition chamber, in accordance with someembodiments.

DETAILED DESCRIPTION OF EXEMPLARY EMBODIMENTS

The following disclosure provides many different embodiments, orexamples, for implementing different features of the subject matter.Specific examples of components and arrangements are described below tosimplify the present disclosure. These are, of course, merely examplesand are not intended to be limiting. For example, the formation of afirst feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

FIG. 1 is a schematic illustration of a process chamber, in accordancewith some embodiments. According to some embodiments, the processchamber 100 includes a rotating magnetron 101 located on the top of thechamber 103, in which objects are positioned for deposition on the sidesof the chamber 103. External side magnets 104 and 105 are located on theexterior of the chamber 103. On the bottom of the chamber 103, target102 with a radius r is located at the center of the bottom. The externalside magnets 104 and 105, together with the rotating magnetron 101 onthe top of the chamber 103, generate a magnetic field inside the chamberto facilitate the deposition of material from an object located insidethe chamber 103. More details regarding the structure of the rotatingmagnetron 101 and the target 102 will be discussed in the followingparagraphs.

FIG. 2 illustrates various features of a process chamber andcorresponding magnets and magnetic fields, in accordance with someembodiments. According to some embodiments, 201 is a perspective view ofthe rotating magnetron 101, which includes an external component 202 andan internal component 203. Both the external and the internal components202 and 203 include a plurality of magnets. According to someembodiments, the magnets of internal component 202 all have their northpole pointing in the opposite direction of the north pole of the magnetsof the external component 203. According to some embodiments, themagnets of internal component 202 all have their north pole pointing up,and the north pole of the magnets of the external component 203 pointsdown. View 204 is a perspective view of the rotating magnetron with acounter weight rotating in a chamber, with the target at the bottom.View 205 is a side view of the rotating magnetron, and view 206 is oneof the magnets in the magnet array. View 207 shows the magnet 206 as astandalone magnet, in accordance with some embodiments.

The rotating magnetron 101 and the external side magnets 104 and 105generate a magnetic field 208. Due to the rotating nature of themagnetron and the geometry of the chamber, the magnetic field 208 isformed in the shape of a ring, which means that the magnetic field isrelatively weak inside a first radius (i.e., inside the ring) andoutside a second radius (i.e., outside the ring). Graph 209 is anillustration of the erosion depth of the target as a function of theradius from center (C) as shown in FIG. 1. As discussed earlier, sincethe magnetic field inside a first radius is relatively weak, nosignificant erosion is observed inside the radius of 40 mm, for example.As the radius increase, the magnetic field reaches a peak at radius 60mm, and the strong magnetic field creates a strong erosion at radius 60mm, the corresponding erosion depth reaches 19 mm at radius 60 mm, inthe example shown in graph 209. Then the magnetic field graduallydecreases outside radius 60 mm, and the corresponding erosion alsodecreases following the magnetic field.

FIG. 3 is a schematic illustration of a distribution of the processchamber magnets, in accordance with some embodiments. According to someembodiments, 300 is a top view of the process chamber, 301 is the sidewall of the chamber and 302 is the bottom of the chamber on which atarget is located. The rotating magnetron 310 include two groups ofmagnets, 303 is an external array of magnets and 304 is an internalarray of magnets. According to some embodiments, the north poles of theinternal array of magnets point upward, and the north poles of theexternal array of magnets point downward. Similar to prior discussions,301′ is a perspective view of the rotating magnetron 310, and 310″ is aside view.

FIG. 4 is a schematic illustration of the magnetic field as a functionof the radius of the target and the consumption of the target as afunction of the radius of the target, in accordance with someembodiments. According to some embodiments, the x-axis is radius inmillimeters, the left y-axis is the magnetic flux in KGauss·Deg, and theright y-axis is target erosion in millimeters. The magnetic flux ismeasure of the strength of the magnetic field.

According to some embodiments, curve 401 is a curve designating themagnetic flux of the north pole, and curve 402 is a curve designatingthe magnetic flux of the south pole. In physics, specificallyelectromagnetism, the magnetic flux (often denoted Φ or ΦB) through asurface is the surface integral of the normal component of the magneticfield B passing through that surface. The SI base unit, according toInternational System of Units, of magnetic flux is the weber (Wb) (inderived units: volt-seconds). The CGS (centimetre-gram-second) unit ofmagnetic flux is the Maxwell. Magnetic flux is usually measured with afluxmeter, which contains measuring coils and electronics, that canevaluate the change of voltage in the measuring coils to calculate themagnetic flux.

The curve 403 is a curve designating the target erosion. According tosome embodiments, a subtraction of the curves 402 and 403 produces theoverall strength of the magnetic field generated by the magnetron insidethe chamber. More details regarding the overall strength of the magneticfield will be discussed in the following paragraphs.

FIG. 5 is a schematic illustration of the magnetic field and targetprofile as functions of the radius of the target, in accordance withsome embodiments. According to some embodiments, the x-axis is theradius from the center of the chamber in millimeters. The y-axis on theleft, which is associated with the curve 502, is a target profile, alsoin millimeters, designating the consumed thickness of the targetmaterial. The y-axis on the right, which is associated with curve 501,is the magnetic flux in units of a Weber. Magnetic flux is the productof the average magnetic field times the perpendicular area that itpenetrates: Φ=B·S=BS cos θ, where B is vector of the magnetic field andB is the scalar amplitude of the magnetic field, S is the vector area ofthe vector magnetic field B, and S is the scalar area of the magneticfield, θ is the angle between the magnetic field lines and normal(perpendicular) to S. It is a quantity of convenience in the statementof Faraday's Law and in the discussion of objects like transformers andsolenoids. As discussed in FIG. 2 above, the magnetic field generated bythe rotating magnetron before the adjustment of the magnets is measuredby the magnetic flux curve 501. As illustrated by curve 501, themagnetic flux is relatively weak near the center of the chamber, andreaches a peak near the radius of 50 mm˜60 mm, then gradually decreasesuntil it reaches the edge of the chamber. The corresponding targetprofile curve 502 follows the trend of the magnetic flux curve 501. Asdiscussed above, the target profile is the amount of material consumed,measured in millimeters, during the deposition process. As illustratedin FIG. 5, the target profile curve 502 also reaches a peak when themagnetic flux curve 501 reaches a peak, and the target profile curve 502gradually decreases following the decreasing trend of the magnetic fluxcurve 501. More details of the relationship between the target profileand the magnetic flux will be discussed in the following paragraphs.When the remaining weight of the target is 66%, the target at the radiusof 55 mm-60 mm is already more than 80 mm consumed, which requiresreplacement. As a result, approximately 66% of the target is wasted.

FIG. 6 is a schematic illustration of adjustable magnets of a processchamber, in accordance with some embodiments. According to someembodiments, 600 is a top view of the process chamber, 601 is the sidewall of the process chamber, 610′ is the rotating magnetron whichincludes an internal array of magnets 603 and an external array ofmagnets 602. As used herein, the term “adjustable magnet” means,according to some embodiments, for example, replacing an existing magnetwith another magnet with at least one of following different parameters:diameter, height, magnetic field strength, magnetic field distribution,and material; according to some other embodiments, for example, changingthe height of the magnet by adding additional metal plates on the topand/or bottom of the magnet, or by removing metal from the top and/orthe bottom of the magnet; according to some other embodiments, forexample, changing the diameter of the magnet by adding concentric metalrings to the magnet, or by removing existing concentric metal rings fromthe magnet; according to some other embodiments, for example, when themagnet is electric magnet, changing the magnetic field distribution andstrength by changing the amplitude, frequency and/or direction of theelectric current flowing into the magnet. A person of ordinary skill inthe art understands that there are other ways to adjust the physicalparameters and properties of magnets, the above mentioned examples arenot meant to limit the scope of “adjustable magnet.”

In order to adjust the magnetic field generated by the magnetron insidethe chamber, a first group of magnets 604 in the external array ofmagnets 602 are selected to be modified to reduce their magnetic field.And a second group of magnets 605 in the external array of magnets 602are selected to be modified to increase their magnetic field. In theside view of the magnetron 610′, the second group of magnets 605 aredesignated as 605′, and the first group of magnets 604 are designated as604′. According to some embodiments, there are a plurality of upperfixing spots 607 located on the top of the magnetron, and a plurality ofcorresponding lower fixing spots 608 located on the bottom of themagnetron. Each individual magnet 606 can be fixed to a differenthorizontal location with a different pair of upper fixing spot 607 andlower fixing spot 608. As will be discussed in more detail in FIG. 7,each magnet 606 includes a upper connector and a lower connector.According to some embodiments, the upper connectors and the lowerconnectors are screws, and the upper and lower fixing spots are matchingscrew holes. According to some embodiments, each individual magnet canbe fixed to a different horizontal location by screwing the magnet to adifferent pair of upper and lower fixing spots.

According to some embodiments, in the side view 610″ of the magnetron,selected magnets are adjusted, either in height, in radius, in location,or in volume to modify their corresponding magnetic field. 606 is adetailed view of an individual magnet, which will be discussed infurther detail below with reference to FIG. 7.

According to some embodiments, each selected magnet is adjusted and thenthe overall magnetic field of the magnetron is measured. One purpose ofsuch adjustment is to eliminate the sharp peak observed in the magneticflux curve 501 and the corresponding peak on the target profile curve502. After such adjustment, relatively flat curves are achieved whichwill be discussed in further detail below with reference to FIG. 8.According to some embodiments, the consumption area of the target canalso be increased by adjusting the magnetic field of the magnetron. Theconsumption area is the area on the target which are consumed during thedeposition process, a larger consumption area increases the utility rateof the target and reduces waste of the target material. According tosome embodiments, measurement of the magnetic field is conducted aftereach round of magnet adjustments. According to some embodiments,feedback control is provided for the next round of adjustment of themagnets to achieve the design magnetic field. According to someembodiments, feedback control is implemented by comparing the measuredmagnetic field distribution with the designed magnetic fielddistribution, then calculating the difference between measured magneticfield distribution and the designed magnetic field distribution, andthen providing information or guidance regarding how to change, oradjust, each individual magnet to achieve the desired magnetic fielddistribution. According to some embodiments, the above mentionedfeedback control is achieved with automated processes assisted bycomputer software and hardware. Persons or ordinary skill in the art candetermine without undue experimentation how to adjust one or morephysical parameters of the magnets discussed to achieve a desiredmagnetic field distribution.

FIG. 7 is a perspective view of an adjustable magnet, in accordance withsome embodiments. According to some embodiments, the magnet 700 includesa magnet body 701, an upper connector 702 and a lower connector 703.According to some embodiments, different heights, radii and/or volumescan be selected for the magnet body 701 to vary the overall magneticfield produced by the magnet 700. According to some embodiments, theupper and lower connectors 702 and 703 can be adjusted to fix the magnetbody 701 at different positions to vary the overall magnetic field.According to some embodiments, the magnet body 701 can be fixed atdifferent elevations in the chamber by adjusting screws or fasteners(not shown) in the upper and lower connectors 702 and 703. According tosome embodiments, the magnet body 701 can be fixed at differenthorizontal locations by adjusting screws, for example, in the upper andlower connectors 702 and 703. According to some embodiments, there are atop fastener and a lower fastener for fastening the magnet to themagnetron. According to some embodiments, the top fastener is a screw.According to some embodiments, the bottom fastener is a screw. Accordingto some embodiments, the magnet body 701 is an electro-magnet, whosemagnetic field can be adjusted and controlled by the direction andintensity of the electric current flowing into the coils inside theelectro-magnet body 701. According to some embodiments, each magnet body701 is an electrical magnet and is individually controlled by anelectronic control circuit (not shown) that provides current to theelectrical magnet. According to some embodiments, all magnet bodies inthe magnetron are collectively controlled by a control circuit.

FIG. 8 is a schematic illustration of the target profile and magnetfield as functions of the radius of the target in a process chamber, inaccordance with some embodiments. The x-axis and the y-axes have thesame scales and units as discussed above with respect to FIG. 5.According to some embodiments, the magnetron is modified by adjustingthe corresponding magnets as discussed in the paragraphs above. As aresult of such adjustment, the magnetic flux curve 801 does not bear apeak like that of curve 501 in FIG. 5. Neither does the magnetic fluxcurve 801 decrease sharply like that of 501. Instead, as illustrated inFIG. 8, the magnetic flux curve 801 stays at a relatively constant levelalmost all the way to the edge of the chamber. The peak in thecorresponding target profile curve 802 is also eliminated as a result,and the target profile 802 reaches a first plateau when the magneticflux approaches a constant level, followed by a second higher plateaunear the edge of the chamber. When the remaining weight of the target is34%, the target profile is still less than 12 mm consumed. Thus, a moreefficient utilization of the target material is achieved by utilizingmagnets of different sizes and configurations, as discussed above.

FIG. 9 is a schematic illustration of the relationship between thetarget profile and the magnetic field, in accordance with someembodiments. FIG. 9 is a linear regression of a target profile andmagnetic flux, which shows that the relationship between the targetprofile and magnetic flux is highly linear, with a R² value of 0.9073.In statistics, linear regression is an approach for modeling therelationship between a scalar dependent variable and one or moreexplanatory variables (or independent variables). R² is a statisticalmeasure of how close the data are to the fitted regression line. It isalso known as the coefficient of determination, or the coefficient ofmultiple determination for multiple regression. The R² is the percentageof the response variable variation that is explained by a linear model,or: R²=Explained variation/Total variation. R-squared is always between0 and 1: 0 indicates that the model explains none of the variability ofthe response data around its mean; 1 indicates that the model explainsall the variability of the response data around its mean. In general,the higher the R², the better the model fits your data. Accordingly, aR² value of 0.9073 means a very good linear fit.

FIG. 10 is flow chart illustrating a method for modifying magnetic fielddistribution in a deposition chamber, in accordance with someembodiments. According to some embodiments, a method for modifyingmagnetic field distribution in a deposition chamber includes a firstoperation 1001 of providing a target magnetic field distribution, asecond operation 1002 of removing a plurality of fixed magnets in thedeposition chamber, a third operation 1003 of replacing each of theplurality of fixed magnets with a respective magnet having a differentconfiguration, a fourth operation 1004 of adjusting the position of eachof the adjustable magnet, according to some embodiments, by adjustingthe corresponding screws in the upper and lower connectors of the magnetbodies, a fifth operation 1005 of adjusting the size of each of theadjustable magnet, a sixth operation 1006 of adjusting the magnetic fluxof each of the adjustable magnet, according to some embodiments, byadjusting the dimension of the magnet body, or according to someembodiments, by implementing a magnet with different field strength, aseventh operation 1007 of measuring the magnetic field distribution inthe deposition chamber, according to some embodiments, by implementing aplurality of magnetic field sensors, for example, and an eighthoperation 1008 of comparing the measured magnetic field distribution inthe deposition chamber with the target magnetic field distribution.

According to some embodiments, a method for modifying a magnetic fielddistribution in a deposition chamber is disclosed. The method includesthe operations of: providing a target magnetic field distribution,removing a first plurality of fixed magnets in the deposition chamber,replacing each of the first plurality of fixed magnets with respectiveones of a second plurality of magnets, performing at least one ofadjusting a position of at least one of the second plurality of themagnets, and adjusting a size of at least one of the second plurality ofmagnets, measuring the magnetic field distribution in the depositionchamber, and comparing the measured magnetic field distribution in thedeposition chamber with the target magnetic field distribution.

According to some embodiments, the method further comprises based on thecomparison, providing feedback information for adjusting each of theplurality of adjustable magnet. According to some embodiments, themethod further comprises based on the feedback information, performingfor a second time of at least one of adjusting the position of at leastone of the second plurality of magnets, and adjusting the size of atleast one of the second plurality of magnets. According to someembodiments, the method further comprises measuring the magnetic fielddistribution in the deposition chamber again. According to someembodiments, the method further comprises comparing the measuredmagnetic field distribution in the deposition chamber with the targetmagnetic field distribution again. According to some embodiments, themethod further comprises based on the comparison, providing feedbackinformation for adjusting each of the plurality of adjustable magnet.According to some embodiments, the method further comprises based on thefeedback information, performing for a third time of at least one ofadjusting the position of at least one of the second plurality ofmagnets, and adjusting the size of at least one of the second pluralityof magnets. According to some embodiments, the method further comprisesmeasuring the magnetic field distribution in the deposition chamberagain. According to some embodiments, the method further comprisesfixing at least one of the position of at least one of the secondplurality of magnets, and the size of at least one of the secondplurality of magnets.

According to some embodiments, a deposition chamber is disclosed. Thedeposition chamber includes a plurality of adjustable magnets foradjusting a magnetic field distribution of the deposition chamber, aposition of each of the adjustable magnets is individually adjustable, avolume of each of the plurality of adjustable magnets is individuallyadjustable, a magnetic field strength of each of the adjustable magnetsis individually adjustable. According to some embodiments, the positionof each of the adjustable magnets is adjusted vertically. According tosome embodiments, the position of each of the adjustable magnets isadjusted vertically by adjusting screws. According to some embodimentsthe volume of each of the adjustable magnets is adjusted by adjustingthe diameter of the corresponding magnet. According to some embodiments,the magnetic field strength of each of the adjustable magnets isadjusted by adjusting the magnet field strength of the correspondingmagnet.

According to some embodiments, an adjustable magnet is disclosed. Theadjustable electric magnet includes a cylindrical metal body forconducting magnet flux, wherein a diameter of the cylindrical metal bodyis adjustable, a height of the cylindrical metal body is adjustable, atop adjustable connector for adjusting a position of the adjustableelectric magnet, and a bottom adjustable connector for adjusting theposition of the adjustable electric magnet. According to someembodiments, the adjustable magnet further includes a plurality of metalcoils for generating an electro-magnetic field, an adjustable currentsource for adjusting the electric current flowing in the plurality ofmetal coils. According to some embodiments, the adjustable currentsource for adjusting the electric current flowing in the plurality ofmetal coils is a current source with at least one adjustable resister.According to some embodiments, the top adjustable connector foradjusting the position of the adjustable electric magnet is a screw.According to some embodiments, the bottom adjustable connector foradjusting the position of the adjustable electric magnet is a screw.According to some embodiments, the adjustable electric magnet furtherincludes a top fastener for fixing the position of the adjustableelectric magnet. According to some embodiments, the adjustable electricmagnet further includes a bottom fastener for fixing the position of theadjustable electric magnet. According to some embodiments, the topfastener is a screw. According to some embodiments, the bottom fasteneris a screw.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A method, comprising: removing a first pluralityof fixed magnets in a magnetron of a deposition chamber; replacing eachof the first plurality of fixed magnets with respective ones of a secondplurality of adjustable magnets; vertically adjusting a position of atleast one of the second plurality of magnets in the magnetron byadjusting an upper screw on the at least one magnet and a lower screwunder the at least one magnet; measuring a magnetic field distributionin the deposition chamber; and comparing the measured magnetic fielddistribution in the deposition chamber with a target magnetic fielddistribution.
 2. The method of claim 1, further comprising: based on thecomparison, providing feedback information for adjusting each of theplurality of adjustable magnets.
 3. The method of claim 2, furthercomprising: based on the feedback information, for a second timevertically adjusting the position of at least one of the secondplurality of magnets, and adjusting a diameter of at least one of thesecond plurality of magnets.
 4. The method of claim 3, furthercomprising: measuring the magnetic field distribution in the depositionchamber again.
 5. The method of claim 4, further comprising: comparingagain the measured magnetic field distribution in the deposition chamberwith the target magnetic field distribution.
 6. The method of claim 5,further comprising: based on the comparison, providing again feedbackinformation for adjusting each of the plurality of adjustable magnet. 7.A deposition chamber, comprising: a magnetron; and a plurality ofadjustable magnets in the magnetron for adjusting a magnetic fielddistribution of the deposition chamber, wherein a volume of each of theplurality of adjustable magnets is individually adjustable by adjustinga diameter of the corresponding magnet in the magnetron, and whereineach of the adjustable magnets is configured to be adjusted verticallyby adjusting a top adjustable connector on the adjustable magnet and abottom adjustable connector under the adjustable magnet.
 8. Thedeposition chamber of claim 7, wherein a magnetic field strength of eachof the adjustable magnets is individually adjustable.
 9. The depositionchamber of claim 8, wherein: a first subset of adjustable magnets in theplurality of adjustable magnets are selected to be adjusted to reducetheir magnetic field strengths; and a second subset of adjustablemagnets in the plurality of adjustable magnets are selected to beadjusted to increase their magnetic field strengths.
 10. The depositionchamber of claim 7, wherein each of the top adjustable connector and thebottom adjustable connector is a screw.
 11. An adjustable magnet,comprising: a cylindrical metal body for conducting magnet flux, whereina diameter of the cylindrical metal body is adjustable; an upper screwconfigured for adjusting the adjustable magnet vertically; and a lowerscrew configured for adjusting the adjustable magnet vertically.
 12. Theadjustable magnet of claim 11, wherein the adjustable magnet is anelectric adjustable magnet.
 13. The adjustable magnet of claim 12,further comprising: a plurality of metal coils for generating anelectro-magnetic field; and an adjustable current source for adjustingthe electric current flowing in the plurality of metal coils.
 14. Theadjustable magnet of claim 13, wherein the adjustable current source foradjusting the electric current flowing in the plurality of metal coilsis a current source with at least one adjustable resister.
 15. Theadjustable magnet of claim 13, wherein a height of the cylindrical metalbody is adjustable.
 16. The adjustable magnet of claim 13, wherein theadjustable magnet is adjusted vertically by the upper screw and thelower screw coupling the adjustable magnet to a fixing spot of amagnetron.
 17. The adjustable magnet of claim 13, further comprising atop fastener for fixing a position of the adjustable magnet.
 18. Theadjustable magnet of claim 13, further comprising a bottom fastener forfixing a position of the adjustable magnet.
 19. The adjustable magnet ofclaim 17, wherein the top fastener is a screw.
 20. The adjustable magnetof claim 18, wherein the bottom fastener is a screw.